PJD14P06A-AU_L2_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| Кількість | Ціна |
|---|---|
| 3000+ | 18.54 грн |
| 6000+ | 16.45 грн |
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Технічний опис PJD14P06A-AU_L2_000A1 Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M, Qualification: AEC-Q101, Grade: Automotive, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 40W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції PJD14P06A-AU_L2_000A1 за ціною від 13.84 грн до 75.89 грн
| Фото | Назва | Виробник | Інформація |
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PJD14P06A-AU_L2_000A1 | Виробник : Panjit |
MOSFETs 60V P-Channel Enhancement Mode MOSFET |
на замовлення 1341 шт: термін постачання 21-30 дні (днів) |
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PJD14P06A-AU_L2_000A1 | Виробник : Panjit International Inc. |
Description: 60V P-CHANNEL ENHANCEMENT MODE M Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 8336 шт: термін постачання 21-31 дні (днів) |
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