PJD15P06A-AU_L2_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 14.17 грн |
| 6000+ | 12.94 грн |
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Технічний опис PJD15P06A-AU_L2_000A1 Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V, Power Dissipation (Max): 2W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PJD15P06A-AU_L2_000A1 за ціною від 13.91 грн до 59.75 грн
| Фото | Назва | Виробник | Інформація |
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PJD15P06A-AU_L2_000A1 | Виробник : Panjit |
MOSFET 60V P-Channel Enhancement Mode MOSFET |
на замовлення 4302 шт: термін постачання 21-30 дні (днів) |
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PJD15P06A-AU_L2_000A1 | Виробник : Panjit International Inc. |
Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7130 шт: термін постачання 21-31 дні (днів) |
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PJD15P06A-AU_L2_000A1 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -60A Drain current: -15A Gate charge: 17nC On-state resistance: 85mΩ Gate-source voltage: ±20V Power dissipation: 25W Application: automotive industry Kind of channel: enhancement Case: TO252AA Type of transistor: P-MOSFET |
товару немає в наявності |