PJD30N15_L2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
| Кількість | Ціна |
|---|---|
| 4+ | 92.32 грн |
| 10+ | 59.89 грн |
| 100+ | 41.79 грн |
| 500+ | 31.59 грн |
| 1000+ | 29.09 грн |
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Технічний опис PJD30N15_L2_00001 Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE, Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2W (Ta), 102W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції PJD30N15_L2_00001
| Фото | Назва | Виробник | Інформація |
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PJD30N15_L2_00001 | Виробник : Panjit International Inc. |
Description: 150V N-CHANNEL ENHANCEMENT MODE Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta), 102W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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PJD30N15_L2_00001 | Виробник : Panjit |
MOSFETs 150V N-Channel Enhancement Mode MOSFET |
товару немає в наявності |