| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.32 грн |
| 10+ | 32.93 грн |
| 100+ | 19.58 грн |
| 500+ | 15.40 грн |
| 1000+ | 13.93 грн |
| 3000+ | 13.03 грн |
| 6000+ | 9.96 грн |
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Технічний опис PJD35P03_L2_00001 Panjit
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 35W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Інші пропозиції PJD35P03_L2_00001 за ціною від 16.04 грн до 64.27 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PJD35P03_L2_00001 | Panjit International Inc. |
 Description: 30V P-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1717 шт: термін постачання 21-31 дні (днів) |
|
| PJD35P03_L2_00001 |
|
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1717 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.27 грн |
| 10+ | 38.27 грн |
| 100+ | 24.77 грн |
| 500+ | 17.80 грн |
| 1000+ | 16.04 грн |