| Кількість | Ціна |
|---|---|
| 7+ | 50.22 грн |
| 10+ | 32.87 грн |
| 100+ | 19.54 грн |
| 500+ | 15.37 грн |
| 1000+ | 13.91 грн |
| 3000+ | 13.00 грн |
| 6000+ | 9.94 грн |
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Технічний опис PJD35P03_L2_00001 Panjit
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 35W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Інші пропозиції PJD35P03_L2_00001 за ціною від 16.01 грн до 64.15 грн
| Фото | Назва | Виробник | Інформація |
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PJD35P03_L2_00001 | Виробник : Panjit International Inc. |
 Description: 30V P-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1717 шт: термін постачання 21-31 дні (днів) |
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PJD35P03_L2_00001 | Виробник : Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
товару немає в наявності |
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PJD35P03-L2-00001 | Виробник : Panjit |
MOSFET TO-252AA/MOS/TO/NFET-30SMP |
товару немає в наявності |