PJD50N04_L2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 5+ | 63.37 грн |
| 10+ | 38.20 грн |
| 100+ | 24.85 грн |
| 500+ | 17.93 грн |
| 1000+ | 16.19 грн |
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Технічний опис PJD50N04_L2_00001 Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 54W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції PJD50N04_L2_00001
| Фото | Назва | Виробник | Інформація |
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PJD50N04_L2_00001 | Виробник : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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PJD50N04_L2_00001 | Виробник : Panjit |
MOSFETs 40V N-Channel Enhancement Mode MOSFET |
товару немає в наявності |