PJD55N04V-AU_L2_002A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис PJD55N04V-AU_L2_002A1 Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції PJD55N04V-AU_L2_002A1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| PJD55N04V-AU_L2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
PJD55N04V-AU_L2_002A1 | Panjit |
 MOSFET 40V N-Channel Enhancement Mode MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| PJD55N04V-AU_L2_002A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 128A; Idm: 512A; 53W; TO252AA Pulsed drain current: 512A Power dissipation: 53W Gate charge: 34nC Polarisation: unipolar Drain current: 128A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252AA On-state resistance: 3.6mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| PJD55N04V-AU_L2_002A1 |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJD55N04V-AU_L2_002A1 |
|
Виробник: Panjit
MOSFET 40V N-Channel Enhancement Mode MOSFET
MOSFET 40V N-Channel Enhancement Mode MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJD55N04V-AU_L2_002A1 |
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 128A; Idm: 512A; 53W; TO252AA
Pulsed drain current: 512A
Power dissipation: 53W
Gate charge: 34nC
Polarisation: unipolar
Drain current: 128A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
On-state resistance: 3.6mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 128A; Idm: 512A; 53W; TO252AA
Pulsed drain current: 512A
Power dissipation: 53W
Gate charge: 34nC
Polarisation: unipolar
Drain current: 128A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
On-state resistance: 3.6mΩ
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.