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PJD55N04V-AU_L2_002A1 PanJit Semiconductor

Name: PJD55N04V-AU_L2_002A1
Brand: Panjit
SKU: 23872200-4
Price: 269400 UAH
Availability: BackOrder

Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 128A; Idm: 512A; 53W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 128A
Pulsed drain current: 512A
Power dissipation: 53W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт

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Технічний опис PJD55N04V-AU_L2_002A1 PanJit Semiconductor

Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V, Qualification: AEC-Q101.

Інші пропозиції PJD55N04V-AU_L2_002A1

Назва	Виробник	Інформація	Доступність	Ціна
PJD55N04V-AU_L2_002A1	Виробник : Panjit International Inc.	Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
PJD55N04V-AU_L2_002A1	Виробник : Panjit International Inc.	Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
PJD55N04V-AU_L2_002A1	Виробник : Panjit	MOSFET 40V N-Channel Enhancement Mode MOSFET	товару немає в наявності	В кошику од. на суму грн.
PJD55N04V-AU_L2_002A1	Виробник : PanJit Semiconductor	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 128A; Idm: 512A; 53W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 128A Pulsed drain current: 512A Power dissipation: 53W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement	товару немає в наявності	В кошику од. на суму грн.