PJD60N04-AU_L2_000A1 Panjit International Inc.
Виробник: Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис PJD60N04-AU_L2_000A1 Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.4W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції PJD60N04-AU_L2_000A1
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PJD60N04-AU_L2_000A1 | Виробник : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V Qualification: AEC-Q101 |
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PJD60N04-AU_L2_000A1 | Виробник : Panjit |
MOSFETs 40V N-Channel Enhancement Mode MOSFET |
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PJD60N04-AU-L2-000A1 | Виробник : Panjit |
MOSFETs |
товару немає в наявності |