PJD60N04S-AU_L2_002A1 Panjit International Inc.
Виробник: Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2862 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 188.56 грн |
| 10+ | 124.75 грн |
| 100+ | 89.52 грн |
| 500+ | 76.90 грн |
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Технічний опис PJD60N04S-AU_L2_002A1 Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 115W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 50µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2862 pF @ 25 V, Qualification: AEC-Q101, Packaging: Tape & Reel (TR).
Інші пропозиції PJD60N04S-AU_L2_002A1 за ціною від 68.44 грн до 210.41 грн
| Фото | Назва | Виробник | Інформація |
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PJD60N04S-AU_L2_002A1 | Виробник : Panjit |
MOSFETs 40V N-Channel Enhancement Mode MOSFET |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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PJD60N04S-AU_L2_002A1 | Виробник : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2862 pF @ 25 V Qualification: AEC-Q101 Packaging: Tape & Reel (TR) |
товару немає в наявності |