PJD60P04E-AU_L2_006A1 Panjit International Inc.
Виробник: Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1165 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 126.31 грн |
| 10+ | 85.38 грн |
| 100+ | 59.90 грн |
| 500+ | 45.44 грн |
| 1000+ | 43.05 грн |
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Технічний опис PJD60P04E-AU_L2_006A1 Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PJD60P04E-AU_L2_006A1 за ціною від 37.53 грн до 132.69 грн
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PJD60P04E-AU_L2_006A1 | Виробник : Panjit |
MOSFETs 40V P-Channel Enhancement Mode MOSFET |
на замовлення 2901 шт: термін постачання 21-30 дні (днів) |
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| PJD60P04E-AU_L2_006A1 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -61A; Idm: -171A; 38W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -61A Pulsed drain current: -171A Power dissipation: 38W Case: TO252AA Gate-source voltage: ±25V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
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PJD60P04E-AU_L2_006A1 | Виробник : Panjit International Inc. |
Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| PJD60P04E-AU_L2_006A1 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -61A; Idm: -171A; 38W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -61A Pulsed drain current: -171A Power dissipation: 38W Case: TO252AA Gate-source voltage: ±25V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |