PJD70P03_L2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
на замовлення 746 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 79.39 грн |
| 10+ | 48.01 грн |
| 100+ | 31.50 грн |
| 500+ | 22.86 грн |
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Технічний опис PJD70P03_L2_00001 Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V.
Інші пропозиції PJD70P03_L2_00001
| Фото | Назва | Виробник | Інформація |
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PJD70P03_L2_00001 | Виробник : Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V |
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PJD70P03_L2_00001 | Виробник : Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET |
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PJD70P03-L2-00001 | Виробник : Panjit |
MOSFETs TO-252AA/MOS/TO/NFET-30SMP |
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