| Кількість | Ціна |
|---|---|
| 2+ | 162.26 грн |
| 10+ | 119.96 грн |
| 100+ | 80.67 грн |
| 500+ | 68.15 грн |
| 1000+ | 58.55 грн |
| 3000+ | 49.03 грн |
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Технічний опис PJD75P04E-AU_L2_006A1 Panjit
Description: 40V P-CHANNEL ENHANCEMENT MODE M, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3477 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3W (Ta), 75W (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 67A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції PJD75P04E-AU_L2_006A1 за ціною від 56.79 грн до 165.85 грн
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PJD75P04E-AU_L2_006A1 | Виробник : Panjit International Inc. |
 Description: 40V P-CHANNEL ENHANCEMENT MODE MRds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 67A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3477 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Ta), 75W (Tc) |
на замовлення 2989 шт: термін постачання 21-31 дні (днів) |
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PJD75P04E-AU_L2_006A1 | Виробник : Panjit International Inc. |
Description: 40V P-CHANNEL ENHANCEMENT MODE M Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3477 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 67A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |