PJD80N04-AU_L2_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 79.4W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 3+ | 123.61 грн |
| 10+ | 75.26 грн |
| 100+ | 50.39 грн |
| 500+ | 37.29 грн |
| 1000+ | 34.08 грн |
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Технічний опис PJD80N04-AU_L2_000A1 Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Qualification: AEC-Q101, Grade: Automotive, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.4W (Ta), 79.4W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції PJD80N04-AU_L2_000A1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PJD80N04-AU_L2_000A1 | Виробник : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Qualification: AEC-Q101 Grade: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.4W (Ta), 79.4W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
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PJD80N04-AU_L2_000A1 | Виробник : Panjit |
MOSFETs 40V N-Channel Enhancement Mode MOSFET |
товару немає в наявності |
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PJD80N04-AU-L2-000A1 | Виробник : Panjit |
MOSFETs TO252 N CHAN 40V |
товару немає в наявності |