PJD90N03_L2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
на замовлення 2983 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 133.37 грн |
| 10+ | 81.42 грн |
| 100+ | 54.63 грн |
| 500+ | 40.48 грн |
| 1000+ | 37.00 грн |
Відгуки про товар
Написати відгук
Технічний опис PJD90N03_L2_00001 Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 90A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V, Power Dissipation (Max): 2W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V.
Інші пропозиції PJD90N03_L2_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
PJD90N03_L2_00001 | Виробник : Panjit International Inc. |
Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V |
товару немає в наявності |
|
 |
PJD90N03_L2_00001 | Виробник : Panjit |
MOSFETs 30V N-Channel Enhancement Mode MOSFET |
товару немає в наявності |
|
|
|
PJD90N03-L2-00001 | Виробник : Panjit | MOSFETs |
товару немає в наявності |