PJD9N10A_L2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1021 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 152mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 12.33 грн |
| 6000+ | 10.99 грн |
| 9000+ | 10.53 грн |
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Технічний опис PJD9N10A_L2_00001 Panjit International Inc.
Description: 100V N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1021 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 31W (Tc), Rds On (Max) @ Id, Vgs: 152mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції PJD9N10A_L2_00001 за ціною від 10.36 грн до 49.57 грн
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PJD9N10A_L2_00001 | Виробник : Panjit International Inc. |
Description: 100V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1021 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 152mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 9A (Tc) |
на замовлення 11566 шт: термін постачання 21-31 дні (днів) |
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PJD9N10A_L2_00001 | Виробник : Panjit |
MOSFETs 100V N-Channel MOSFET |
на замовлення 2720 шт: термін постачання 21-30 дні (днів) |
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