PJD9P06A_L2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 5+ | 63.37 грн |
| 10+ | 50.32 грн |
| 100+ | 39.16 грн |
| 500+ | 31.15 грн |
| 1000+ | 25.37 грн |
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Технічний опис PJD9P06A_L2_00001 Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 15.6W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції PJD9P06A_L2_00001
| Фото | Назва | Виробник | Інформація |
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PJD9P06A_L2_00001 | Виробник : Panjit International Inc. |
Description: 60V P-CHANNEL ENHANCEMENT MODE M Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 15.6W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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PJD9P06A_L2_00001 | Виробник : Panjit |
 MOSFET 60V P-Channel Enhancement Mode MOSFET |
товару немає в наявності |
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| PJD9P06A-L2-00001 | Виробник : Panjit | MOSFET |
товару немає в наявності |