PJE8401_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 13+ | 24.35 грн |
| 21+ | 14.45 грн |
| 100+ | 9.05 грн |
| 500+ | 6.30 грн |
| 1000+ | 5.59 грн |
| 2000+ | 4.99 грн |
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Технічний опис PJE8401_R1_00001 Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M, Rds On (Max) @ Id, Vgs: 130mOhm @ 900mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-523, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 300mW (Ta), Part Status: Active.
Інші пропозиції PJE8401_R1_00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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PJE8401_R1_00001 | Panjit International Inc. |
Description: 20V P-CHANNEL ENHANCEMENT MODE M Rds On (Max) @ Id, Vgs: 130mOhm @ 900mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 300mW (Ta) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| PJE8401_R1_00001 |
|
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 130mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Part Status: Active
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 130mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.