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PJE8401_R1_00001

PJE8401_R1_00001 Panjit International Inc.

PJE8401.pdf
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
на замовлення 3073 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
13+23.86 грн
21+14.16 грн
100+8.87 грн
500+6.17 грн
1000+5.47 грн
2000+4.89 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
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Технічний опис PJE8401_R1_00001 Panjit International Inc.

Description: 20V P-CHANNEL ENHANCEMENT MODE M, Rds On (Max) @ Id, Vgs: 130mOhm @ 900mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-523, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 300mW (Ta), Part Status: Active.

Інші пропозиції PJE8401_R1_00001

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
PJE8401_R1_00001 PJE8401_R1_00001 Panjit International Inc. PJE8401.pdf Description: 20V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 130mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Part Status: Active
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PJE8401_R1_00001 PanJit Semiconductor PJE8401.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
PJE8401_R1_00001 PJE8401.pdf
PJE8401_R1_00001
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 130mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PJE8401_R1_00001 PJE8401.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.