PJE8402_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 6.75 грн |
| 8000+ | 6.36 грн |
| 12000+ | 5.63 грн |
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Технічний опис PJE8402_R1_00001 Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 300mW (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-523.
Інші пропозиції PJE8402_R1_00001 за ціною від 6.10 грн до 31.00 грн
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PJE8402_R1_00001 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE M Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) Part Status: Active |
на замовлення 15131 шт: термін постачання 21-31 дні (днів) |
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PJE8402_R1_00001 | Panjit |
MOSFETs 20V N-Channel Enhancement Mode MOSFETESD Protected |
на замовлення 5507 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJE8402_R1_00001 |
|
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Part Status: Active
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Part Status: Active
на замовлення 15131 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.00 грн |
| 15+ | 20.89 грн |
| 100+ | 10.54 грн |
| 500+ | 8.76 грн |
| 1000+ | 6.82 грн |
| 2000+ | 6.10 грн |
| PJE8402_R1_00001 |
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Виробник: Panjit
MOSFETs 20V N-Channel Enhancement Mode MOSFETESD Protected
MOSFETs 20V N-Channel Enhancement Mode MOSFETESD Protected
на замовлення 5507 шт:
термін постачання 21-30 дні (днів)