Технічний опис PJE8407_R1_00001 Panjit
Description: 20V P-CHANNEL ENHANCEMENT MODE M, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: SOT-523, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 300mW (Ta).
Інші пропозиції PJE8407_R1_00001 за ціною від 6.34 грн до 30.64 грн
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PJE8407_R1_00001 | Panjit International Inc. |
 Description: 20V P-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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| PJE8407_R1_00001 |
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Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.64 грн |
| 17+ | 17.93 грн |
| 100+ | 11.31 грн |
| 500+ | 7.93 грн |
| 1000+ | 7.07 грн |
| 2000+ | 6.34 грн |