| Кількість | Ціна |
|---|---|
| 9+ | 37.73 грн |
| 10+ | 31.99 грн |
| 100+ | 20.79 грн |
| 500+ | 16.27 грн |
| 1000+ | 13.00 грн |
| 2500+ | 10.99 грн |
| 10000+ | 9.94 грн |
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Технічний опис PJL9411_R2_00001 Panjit
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.7W (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 8.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції PJL9411_R2_00001 за ціною від 12.65 грн до 43.03 грн
| Фото | Назва | Виробник | Інформація |
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PJL9411_R2_00001 | Виробник : Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2033 шт: термін постачання 21-31 дні (днів) |
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PJL9411_R2_00001 | Виробник : Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |

