PJL9854_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 40V DUAL N-CHANNEL ENHANCEMENT M
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.7W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Відгуки про товар
Написати відгук
Технічний опис PJL9854_R2_00001 Panjit International Inc.
Description: 40V DUAL N-CHANNEL ENHANCEMENT M, Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Drain to Source Voltage (Vdss): 40V, Power - Max: 1.7W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V.
Інші пропозиції PJL9854_R2_00001 за ціною від 20.12 грн до 51.92 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PJL9854_R2_00001 | Panjit International Inc. |
Description: 40V DUAL N-CHANNEL ENHANCEMENT M Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 3649 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
PJL9854_R2_00001 | Panjit |
MOSFETs 40V Dual N-Channel Enhancement Mode MOSFET |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJL9854_R2_00001 |
|
Виробник: Panjit International Inc.
Description: 40V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: 40V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 3649 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.92 грн |
| 10+ | 44.25 грн |
| 100+ | 33.90 грн |
| 500+ | 25.15 грн |
| 1000+ | 20.12 грн |
| PJL9854_R2_00001 |
|
Виробник: Panjit
MOSFETs 40V Dual N-Channel Enhancement Mode MOSFET
MOSFETs 40V Dual N-Channel Enhancement Mode MOSFET
на замовлення 36 шт:
термін постачання 21-30 дні (днів)