на замовлення 790 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 209.07 грн |
| 10+ | 143.48 грн |
| 100+ | 87.71 грн |
| 500+ | 67.60 грн |
| 800+ | 62.00 грн |
Відгуки про товар
Написати відгук
Технічний опис PJMB390N65EC_R2_00601 Panjit
Description: 650V/ 390MOHM / 10A/ EASY TO DRI, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V, Power Dissipation (Max): 87.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V.
Інші пропозиції PJMB390N65EC_R2_00601 за ціною від 100.91 грн до 233.93 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PJMB390N65EC_R2_00601 | Виробник : Panjit International Inc. |
 Description: 650V/ 390MOHM / 10A/ EASY TO DRIPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V |
на замовлення 587 шт: термін постачання 21-31 дні (днів) |
|
||||||||
| PJMB390N65EC_R2_00601 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO263 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
|
|
PJMB390N65EC_R2_00601 | Виробник : Panjit International Inc. |
Description: 650V/ 390MOHM / 10A/ EASY TO DRI Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V |
товару немає в наявності |
|||||||||
| PJMB390N65EC_R2_00601 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO263 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |