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PJMD360N60EC_L2_00001 Panjit

Name: PJMD360N60EC_L2_00001
Brand: Panjit
SKU: 14615742-4
Price: 600.42 UAH
Availability: InStock

Виробник: Panjit
MOSFETs 22V,ESD Protection,SOT-23,UNI

на замовлення 2488 шт:

термін постачання 21-30 дні (днів)

Кількість	Ціна
2+	300.21 грн
10+	194.39 грн
100+	118.47 грн
500+	97.34 грн
1000+	90.55 грн
2500+	89.80 грн

Мінімальне замовлення: 2

В кошику од. на суму грн.

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Технічний опис PJMD360N60EC_L2_00001 Panjit

Description: 600V SUPER JUNCTION MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V, Power Dissipation (Max): 87.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V.

Інші пропозиції PJMD360N60EC_L2_00001

Назва	Виробник	Інформація	Доступність	Ціна
PJMD360N60EC_L2_00001	Виробник : PanJit Semiconductor	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
PJMD360N60EC_L2_00001	Виробник : Panjit International Inc.	Description: 600V SUPER JUNCTION MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V	товару немає в наявності	В кошику од. на суму грн.
PJMD360N60EC_L2_00001	Виробник : Panjit International Inc.	Description: 600V SUPER JUNCTION MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V	товару немає в наявності	В кошику од. на суму грн.
PJMD360N60EC_L2_00001	Виробник : PanJit Semiconductor	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhancement	товару немає в наявності	В кошику од. на суму грн.