PJMF060N65FR2_T0_00601 Panjit International Inc.
Виробник: Panjit International Inc.Description: 650V/ 60M / FAST RECOVERY QRR/T
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 23A, 10V
Power Dissipation (Max): 343.4W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 100.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4614 pF @ 400 V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис PJMF060N65FR2_T0_00601 Panjit International Inc.
Description: 650V/ 60M / FAST RECOVERY QRR/T, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48.3A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 23A, 10V, Power Dissipation (Max): 343.4W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 250µA, Supplier Device Package: ITO-220AB-F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 100.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4614 pF @ 400 V.
Інші пропозиції PJMF060N65FR2_T0_00601
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
PJMF060N65FR2_T0_00601 | Виробник : Panjit |
MOSFETs 650V/ 60m ohms / Fast Recovery Qrr/trr SJ MOSFET |
товару немає в наявності |