на замовлення 1999 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.74 грн |
| 10+ | 186.39 грн |
| 25+ | 153.44 грн |
| 100+ | 130.86 грн |
| 250+ | 124.22 грн |
| 500+ | 116.91 грн |
| 1000+ | 106.28 грн |
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Технічний опис PJMF360N60EC_T0_00001 Panjit
Description: 600V SUPER JUNCTION MOSFET, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V.
Інші пропозиції PJMF360N60EC_T0_00001 за ціною від 209.3 грн до 436.16 грн
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PJMF360N60EC_T0_00001 | Виробник : Panjit International Inc. |
 Description: 600V SUPER JUNCTION MOSFETPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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PJMF360N60EC_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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PJMF360N60EC_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |