PJMF580N60E1_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 400 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.94 грн |
| 50+ | 52.34 грн |
| 100+ | 46.64 грн |
| 500+ | 34.40 грн |
| 1000+ | 31.38 грн |
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Технічний опис PJMF580N60E1_T0_00001 Panjit International Inc.
Description: 600V SUPER JUNCITON MOSFET, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 400 V.
Інші пропозиції PJMF580N60E1_T0_00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PJMF580N60E1_T0_00001 | Panjit |
MOSFETs 22V,ESD Protection,SOT-23,UNI |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
 |
PJMF580N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB Case: ITO220AB Mounting: THT Kind of package: tube Pulsed drain current: 24A Power dissipation: 28W Gate charge: 15nC Polarisation: unipolar Drain current: 8A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.58Ω |
товару немає в наявності |
В кошику од. на суму грн. |
| PJMF580N60E1_T0_00001 |
|
Виробник: Panjit
MOSFETs 22V,ESD Protection,SOT-23,UNI
MOSFETs 22V,ESD Protection,SOT-23,UNI
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PJMF580N60E1_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Case: ITO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 24A
Power dissipation: 28W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Case: ITO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 24A
Power dissipation: 28W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
товару немає в наявності
В кошику
од. на суму грн.