PJP45N06A_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
| Кількість | Ціна |
|---|---|
| 4+ | 97.79 грн |
| 50+ | 44.22 грн |
| 100+ | 39.30 грн |
| 500+ | 28.75 грн |
| 1000+ | 26.13 грн |
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Технічний опис PJP45N06A_T0_00001 Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V.
Інші пропозиції PJP45N06A_T0_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PJP45N06A_T0_00001 | Виробник : Panjit |
MOSFETs 60V N-Channel Enhancement Mode MOSFET |
товару немає в наявності |
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PJP45N06A-T0-00001 | Виробник : Panjit | MOSFETs |
товару немає в наявності |