PJP4NA65_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 650V N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Технічний опис PJP4NA65_T0_00001 Panjit International Inc.
Description: 650V N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції PJP4NA65_T0_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PJP4NA65_T0_00001 | Виробник : Panjit |
 MOSFET PJ/P4NA65/TP//HF/0.05K/TO-220AB/MOS/TO/NFET-650CTMN/NF650-QI09/PJ/TO220AB-AS19/TO220AB-AS20/TO220AB-AS41 |
товару немає в наявності |