PJP4NA65H_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 650V N-CHANNEL MOSFET
Part Status: Not For New Designs
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 3.75Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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Технічний опис PJP4NA65H_T0_00001 Panjit International Inc.
Description: 650V N-CHANNEL MOSFET, Part Status: Not For New Designs, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 44W (Tc), Rds On (Max) @ Id, Vgs: 3.75Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.
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| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PJP4NA65H_T0_00001 | Виробник : Panjit |
MOSFETs 650V N-Channel MOSFET |
товару немає в наявності |
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PJP4NA65H-T0-00001 | Виробник : Panjit | MOSFETs |
товару немає в наявності |