PJP60R190E_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 600V N-CHANNEL SUPER JUNCTION MO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 231W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 25 V
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Технічний опис PJP60R190E_T0_00001 Panjit International Inc.
Description: 600V N-CHANNEL SUPER JUNCTION MO, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), 231W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 25 V.
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| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PJP60R190E_T0_00001 | Виробник : Panjit |
MOSFETs 600V N-Channel Super Junction MOSFET |
товару немає в наявності |
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| PJP60R190E-T0-00001 | Виробник : Panjit | Array |
товару немає в наявності |