PJP9NA90_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 900V N-CHANNEL MOSFET
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Відгуки про товар
Написати відгук
Технічний опис PJP9NA90_T0_00001 Panjit International Inc.
Description: 900V N-CHANNEL MOSFET, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 205W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V.
Інші пропозиції PJP9NA90_T0_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PJP9NA90_T0_00001 | Виробник : Panjit |
 MOSFET PJ/P9NA90/TP//HF/0.05K/TO-220AB/MOS/TO/NFET-900CTMN//PJ/TO220AB-AS52/TO220AB-AS53/TO220AB-AS41 |
товару немає в наявності |