| Кількість | Ціна |
|---|---|
| 17+ | 19.63 грн |
| 28+ | 11.80 грн |
| 100+ | 6.42 грн |
| 500+ | 4.75 грн |
| 1000+ | 4.40 грн |
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Технічний опис PJQ1916_R1_00201 Panjit
Description: 20V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: DFN1006-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 950mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).
Інші пропозиції PJQ1916_R1_00201 за ціною від 5.12 грн до 22.78 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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PJQ1916_R1_00201 | Panjit International Inc. |
 Description: 20V N-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Supplier Device Package: DFN1006-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Cut Tape (CT) |
на замовлення 8976 шт: термін постачання 21-31 дні (днів) |
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| PJQ1916_R1_00201 |
|
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
на замовлення 8976 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 22.78 грн |
| 21+ | 14.75 грн |
| 100+ | 9.92 грн |
| 500+ | 7.18 грн |
| 1000+ | 6.47 грн |
| 2000+ | 5.87 грн |
| 5000+ | 5.12 грн |