PJQ2409_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: DFN2020B-6L, MOSFET
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
| Кількість | Ціна |
|---|---|
| 9+ | 35.99 грн |
| 12+ | 26.82 грн |
| 100+ | 16.05 грн |
| 500+ | 13.95 грн |
| 1000+ | 9.48 грн |
Відгуки про товар
Написати відгук
Технічний опис PJQ2409_R1_00001 Panjit International Inc.
Description: DFN2020B-6L, MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DFN2020B-6, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції PJQ2409_R1_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
PJQ2409_R1_00001 | Виробник : Panjit International Inc. |
Description: DFN2020B-6L, MOSFETInput Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN2020B-6 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
|
|
PJQ2409_R1_00001 | Виробник : Panjit |
MOSFET 30V P-Channel Enhancement Mode MOSFET |
товару немає в наявності |
