PJQ4401P-AU_R2_000A1 Panjit International Inc.
Виробник: Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
на замовлення 4664 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 60.40 грн |
| 10+ | 51.49 грн |
| 100+ | 39.47 грн |
| 500+ | 29.28 грн |
| 1000+ | 23.42 грн |
| 2000+ | 21.23 грн |
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Технічний опис PJQ4401P-AU_R2_000A1 Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V.
Інші пропозиції PJQ4401P-AU_R2_000A1 за ціною від 20.53 грн до 80.29 грн
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PJQ4401P-AU_R2_000A1 | Виробник : Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET |
на замовлення 4115 шт: термін постачання 21-30 дні (днів) |
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PJQ4401P-AU_R2_000A1 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -200A Power dissipation: 60W Case: DFN3333-8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
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PJQ4401P-AU_R2_000A1 | Виробник : Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V |
товару немає в наявності |
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PJQ4401P-AU_R2_000A1 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -200A Power dissipation: 60W Case: DFN3333-8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |