PJQ4403P_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 12.53 грн |
| 10000+ | 11.2 грн |
| 25000+ | 10.94 грн |
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Технічний опис PJQ4403P_R2_00001 Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V.
Інші пропозиції PJQ4403P_R2_00001 за ціною від 10.79 грн до 42.65 грн
| Фото | Назва | Виробник | Інформація |
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PJQ4403P_R2_00001 | Виробник : Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V |
на замовлення 37672 шт: термін постачання 21-31 дні (днів) |
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PJQ4403P_R2_00001 | Виробник : Panjit |
MOSFET 30V P-Channel Enhancement Mode MOSFET |
на замовлення 132686 шт: термін постачання 21-30 дні (днів) |
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| PJQ4403P_R2_00001 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -140A Power dissipation: 30W Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PJQ4403P-R2-00001 | Виробник : Panjit |
MOSFET DFN3333-8L/MOS/DFN/NFET-30FQMP |
товар відсутній |
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| PJQ4403P_R2_00001 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -140A Power dissipation: 30W Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |