PJQ4408P-AU_R2_000A1

PJQ4408P-AU_R2_000A1 Panjit International Inc.


PJQ4408P-AU.pdf
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
FET Type: N-Channel
на замовлення 4800 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна
6+54.76 грн
10+32.70 грн
100+21.14 грн
500+15.17 грн
1000+13.66 грн
2000+12.39 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
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Технічний опис PJQ4408P-AU_R2_000A1 Panjit International Inc.

Description: 30V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN3333-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 35W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.

Інші пропозиції PJQ4408P-AU_R2_000A1

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PJQ4408P-AU_R2_000A1 PJQ4408P-AU_R2_000A1 Виробник : Panjit International Inc. PJQ4408P-AU.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4408P-AU_R2_000A1 PJQ4408P-AU_R2_000A1 Виробник : Panjit PJQ4408P-AU-1867551.pdf MOSFET /4408/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS20/PJQ4408P-AU-ASBF/DFN33338L-AS01
товару немає в наявності
В кошику  од. на суму  грн.