PJQ4409P_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 24A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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Технічний опис PJQ4409P_R2_00001 Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DFN3333-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 24A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції PJQ4409P_R2_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PJQ4409P_R2_00001 | Виробник : Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET |
товару немає в наявності |
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PJQ4409P-R2-00001 | Виробник : Panjit |
MOSFETs |
товару немає в наявності |