на замовлення 1928 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 111.31 грн |
| 10+ | 94.53 грн |
| 100+ | 56.66 грн |
| 500+ | 45.58 грн |
| 1000+ | 38.82 грн |
| 2500+ | 36.99 грн |
| 5000+ | 22.24 грн |
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Технічний опис PJQ4453EP-AU_R2_002A1 Panjit
Description: 40V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V, Power Dissipation (Max): 2.5W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції PJQ4453EP-AU_R2_002A1
| Фото | Назва | Виробник | Інформація |
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Ціна |
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PJQ4453EP-AU_R2_002A1 | Виробник : Panjit International Inc. |
 Description: 40V P-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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PJQ4453EP-AU_R2_002A1 | Виробник : Panjit International Inc. |
Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |