PJQ4463AP_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.85 грн |
| 12+ | 26.79 грн |
| 100+ | 18.23 грн |
| 500+ | 13.42 грн |
| 1000+ | 12.20 грн |
| 2000+ | 11.16 грн |
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Технічний опис PJQ4463AP_R2_00001 Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V.
Інші пропозиції PJQ4463AP_R2_00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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PJQ4463AP_R2_00001 | Panjit International Inc. |
Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| PJQ4463AP_R2_00001 | Panjit |
MOSFET /4463/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-60FQMP//PJ/DFN33338L-AS12/PJQ4463AP-AS93/DFN33338L-AS01 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |
| PJQ4463AP_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8 Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 60V Drain current: 4.2A Gate-source voltage: 20V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. |
| PJQ4463AP_R2_00001 |
|
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PJQ4463AP_R2_00001 |
|
Виробник: Panjit
MOSFET /4463/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-60FQMP//PJ/DFN33338L-AS12/PJQ4463AP-AS93/DFN33338L-AS01
MOSFET /4463/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-60FQMP//PJ/DFN33338L-AS12/PJQ4463AP-AS93/DFN33338L-AS01
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PJQ4463AP_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.