PJQ4468AP_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
на замовлення 4975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.19 грн |
| 10+ | 45.97 грн |
| 100+ | 31.86 грн |
| 500+ | 24.98 грн |
| 1000+ | 21.26 грн |
| 2000+ | 18.93 грн |
Відгуки про товар
Написати відгук
Технічний опис PJQ4468AP_R2_00001 Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V.
Інші пропозиції PJQ4468AP_R2_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
PJQ4468AP_R2_00001 | Виробник : Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V |
товар відсутній |
|
 |
PJQ4468AP_R2_00001 | Виробник : Panjit |
MOSFET 60V N-Channel Enhancement Mode MOSFET |
товар відсутній |
|
|
|
PJQ4468AP-R2-00001 | Виробник : Panjit |
MOSFET DFN3333-8L/MOS/DFN/NFET-60FQMN |
товар відсутній |