на замовлення 4741 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 80.59 грн |
| 10+ | 64.98 грн |
| 100+ | 43.99 грн |
| 500+ | 37.30 грн |
| 1000+ | 30.38 грн |
| 5000+ | 27.00 грн |
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Технічний опис PJQ4476AP-AU_R2_000A1 Panjit
Description: 100V N-CHANNEL ENHANCEMENT MODE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V, Power Dissipation (Max): 2W (Ta), 62W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції PJQ4476AP-AU_R2_000A1 за ціною від 30.31 грн до 120.96 грн
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PJQ4476AP-AU_R2_000A1 | Виробник : Panjit International Inc. |
 Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 4868 шт: термін постачання 21-31 дні (днів) |
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PJQ4476AP-AU_R2_000A1 | Виробник : Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |