PJQ4476AP_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис PJQ4476AP_R2_00001 Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DFN3333-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 62W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції PJQ4476AP_R2_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
PJQ4476AP_R2_00001 | Виробник : Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN3333-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 62W (Tc) |
товару немає в наявності |
|
| PJQ4476AP_R2_00001 | Виробник : Panjit |
MOSFET /4476/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-100FQMN//PJ/DFN33338L-AS35/PJQ4476AP-ASN4/DFN33338L-AS01 |
товару немає в наявності |