PJQ4848P-AU_R2_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 40V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: DFN3333B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.4W (Ta), 39.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 18.09 грн |
| 10000+ | 16.19 грн |
| 15000+ | 15.60 грн |
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Технічний опис PJQ4848P-AU_R2_000A1 Panjit International Inc.
Description: MOSFET 2N-CH 40V 9A 8DFN, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: DFN3333B-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 2.4W (Ta), 39.6W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Інші пропозиції PJQ4848P-AU_R2_000A1 за ціною від 18.22 грн до 75.94 грн
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PJQ4848P-AU_R2_000A1 | Panjit International Inc. |
Description: MOSFET 2N-CH 40V 9A 8DFN Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.4W (Ta), 39.6W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: DFN3333B-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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PJQ4848P-AU_R2_000A1 | Panjit |
MOSFETs 40V Dual N-Channel Enhancement Mode MOSFET |
на замовлення 5246 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJQ4848P-AU_R2_000A1 |
|
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 40V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.4W (Ta), 39.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: DFN3333B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Description: MOSFET 2N-CH 40V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.4W (Ta), 39.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: DFN3333B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.94 грн |
| 10+ | 46.04 грн |
| 100+ | 30.24 грн |
| 500+ | 22.00 грн |
| 1000+ | 19.39 грн |
| 2000+ | 18.22 грн |
| PJQ4848P-AU_R2_000A1 |
|
Виробник: Panjit
MOSFETs 40V Dual N-Channel Enhancement Mode MOSFET
MOSFETs 40V Dual N-Channel Enhancement Mode MOSFET
на замовлення 5246 шт:
термін постачання 21-30 дні (днів)