на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.66 грн |
| 10+ | 49.73 грн |
| 100+ | 29.56 грн |
| 500+ | 24.64 грн |
| 1000+ | 21.59 грн |
| 3000+ | 18.27 грн |
| 6000+ | 17.6 грн |
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Технічний опис PJQ5439E-AU_R2_006A1 Panjit
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc), Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції PJQ5439E-AU_R2_006A1 за ціною від 20.35 грн до 53.17 грн
| Фото | Назва | Виробник | Інформація |
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| PJQ5439E-AU_R2_006A1 | Виробник : Panjit International Inc. |
 Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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| PJQ5439E-AU_R2_006A1 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; DFN5060-8 Mounting: SMD Kind of package: tape Case: DFN5060-8 Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| PJQ5439E-AU_R2_006A1 | Виробник : Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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| PJQ5439E-AU_R2_006A1 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; DFN5060-8 Mounting: SMD Kind of package: tape Case: DFN5060-8 Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhanced |
товар відсутній |