| Кількість | Ціна |
|---|---|
| 5+ | 80.24 грн |
| 10+ | 49.26 грн |
| 100+ | 28.02 грн |
| 500+ | 21.70 грн |
| 1000+ | 19.61 грн |
| 3000+ | 16.83 грн |
| 6000+ | 16.13 грн |
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Технічний опис PJQ5442_R2_00001 Panjit
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN5060-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції PJQ5442_R2_00001 за ціною від 21.85 грн до 83.71 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||
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PJQ5442_R2_00001 | Виробник : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 2100 шт: термін постачання 21-31 дні (днів) |
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PJQ5442_R2_00001 | Виробник : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |

