| Кількість | Ціна |
|---|---|
| 8+ | 46.00 грн |
| 10+ | 40.07 грн |
| 100+ | 23.78 грн |
| 500+ | 19.89 грн |
| 1000+ | 17.39 грн |
| 3000+ | 14.74 грн |
| 6000+ | 14.19 грн |
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Технічний опис PJQ5450-AU_R2_000A1 Panjit
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN5060-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.4W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції PJQ5450-AU_R2_000A1 за ціною від 19.24 грн до 75.10 грн
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PJQ5450-AU_R2_000A1 | Виробник : Panjit International Inc. |
 Description: 40V N-CHANNEL ENHANCEMENT MODE MQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 2965 шт: термін постачання 21-31 дні (днів) |
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PJQ5450-AU_R2_000A1 | Виробник : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |