PJQ5451E-AU_R2_006A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 67A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
| Кількість | Ціна |
|---|---|
| 3000+ | 30.49 грн |
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Технічний опис PJQ5451E-AU_R2_006A1 Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: DFN5060-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 75W (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 67A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції PJQ5451E-AU_R2_006A1 за ціною від 28.37 грн до 124.13 грн
| Фото | Назва | Виробник | Інформація |
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PJQ5451E-AU_R2_006A1 | Виробник : Panjit International Inc. |
Description: 40V P-CHANNEL ENHANCEMENT MODE M Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.3W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 67A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 4323 шт: термін постачання 21-31 дні (днів) |
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PJQ5451E-AU_R2_006A1 | Виробник : Panjit |
MOSFETs 40V P-Channel Enhancement Mode MOSFET |
на замовлення 2215 шт: термін постачання 21-30 дні (днів) |
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