PJQ5472A_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Відгуки про товар
Написати відгук
Технічний опис PJQ5472A_R2_00001 Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Supplier Device Package: DFN5060-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 41W (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Інші пропозиції PJQ5472A_R2_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
PJQ5472A_R2_00001 | Виробник : Panjit |
MOSFET 100V N-Channel Enhancement Mode MOSFET |
товару немає в наявності |