PJQ5522-AU_R2_002A1 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 2mΩ
Power dissipation: 37.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 141A
Pulsed drain current: 564A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 2mΩ
Power dissipation: 37.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 141A
Pulsed drain current: 564A
Application: automotive industry
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Технічний опис PJQ5522-AU_R2_002A1 PanJit Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W, Case: DFN5060-8, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 43nC, On-state resistance: 2mΩ, Power dissipation: 37.5W, Gate-source voltage: ±20V, Drain-source voltage: 30V, Drain current: 141A, Pulsed drain current: 564A, Application: automotive industry.