PJQ5606_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: MOSFET N/P-CH 30V 7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
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Технічний опис PJQ5606_R2_00001 Panjit International Inc.
Description: MOSFET N/P-CH 30V 7A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), 21W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V, Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060B-8.
Інші пропозиції PJQ5606_R2_00001
| Фото | Назва | Виробник | Інформація |
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PJQ5606_R2_00001 | Виробник : Panjit International Inc. |
Description: MOSFET N/P-CH 30V 7A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 |
товару немає в наявності |
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| PJQ5606_R2_00001 | Виробник : Panjit |
MOSFET PJ/Q5606/TR/13"/HF/3K/DFN5060B-8L/MOS/DFN/NFET-30FKNP//PJ/DFN5060B8L-AS04/PJQ5606-ASN3/DFN50608L-AS01 |
товару немає в наявності |
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PJQ5606-R2-00001 | Виробник : Panjit | MOSFETs |
товару немає в наявності |