PJQ5844_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 40V 10A 8DFN
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.7W (Ta), 32W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Технічний опис PJQ5844_R2_00001 Panjit International Inc.
Description: MOSFET 2N-CH 40V 10A 8DFN, Supplier Device Package: DFN5060B-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V, Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 1.7W (Ta), 32W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції PJQ5844_R2_00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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PJQ5844_R2_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 40V 10A 8DFN Supplier Device Package: DFN5060B-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 1.7W (Ta), 32W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| PJQ5844_R2_00001 |
|
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 40V 10A 8DFN
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.7W (Ta), 32W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 10A 8DFN
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.7W (Ta), 32W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.